“GaAs”可以造什么句，GaAs造句

GaAs double-heterostructure photodetector

Research of GaAs/InP Wafer Bonding Technology;

Multi－gate GaAs MMIC DPDT Power Switches

GaAs/InP and Si/GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic devices

Preparation and Measurements of InP/GaAs(100) Heteroepitaxy

Study of GaAs-Based Resonant Tunneling Piezo-resistive Acoustic Sensor;

Research on Cleaning Process of GaAs Polished Wafer for LED

Heteroepitaxial Growth of InP on GaAs Using Low-temperature InGaP Buffer Layers with Graded Composition

Study on the model of quantum efficiency of reflective varied doping GaAs photocathode

Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)

Study of electron spin diffusion transport in intrinsic GaAs quantum wells by time-and space-resolved absorbtion spectroscopy

GaAs infrared searchlight with novel structure of a coaxial double reflective bowls was used in 1985 for police night vision device.

Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot

This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.

市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。

GaAs PN junction injection laser

Resolution characteristic of exponential-doping GaAs photocathodes

Thermal Stress Distribution of GaAs and InP Crystals in LEC Growth and of GaAs Crystal in LEFZ Growth;

Virtual design for RHEED patterns of GaAs(001)_β 2(2×4) surface

Technique Research Status and Development Trends of GaAs Tandem Solar Cell;

Study on the Optimization of Parameters of Double Q-switched Lasers with AO(EO) and a GaAs Saturable Absorber

It lists and analyzes the operating principle and application of the single diode, double diode and single GaAs FET linearer and finds that they are all inconvenient to be adjusted.

GaAs laser terrain profiler

Progresses on GaAs-based Ⅲ-Ⅴ Multi-junction Solar Cells

Symmetry Constraints of the Magic Angular Momentums and the Electronic Structures of GaAs Quantum Dot

The advantages and disadvantages, technological features, application fields and prospect of GaAs monolithic microwave integrated circuits are discussed in this paper.

Advances in Microwave GaAs FET DeviceandCircuit Technologies

The Study of Electrical Property Degradation of GaAs/Ge Solar Cells by Electron and Proton Co-Irradiation;

GaAs-Based Infrared Photodetection and Photon Up-Conversion Devices

在的生长温度下，通过分子束外延在GaAs表面生长得到体心立方结构金属Ni薄膜。